半導(dǎo)體加工中的材料科學(xué)為討論光電子、傳感器、探測器、生物技術(shù)和綠色能源的功能材料和器件的新加工、應(yīng)用和理論研究提供了一個獨特的論壇。每一期將致力于提供當(dāng)前的快照的見解、新成果,突破和未來趨勢等不同領(lǐng)域的微電子、能源轉(zhuǎn)換和存儲、通信、生物技術(shù)(圖)催化、納米薄膜技術(shù),混合和復(fù)合材料、化學(xué)處理、氣相沉積、設(shè)備制造、和造型的支柱先進半導(dǎo)體加工和應(yīng)用。覆蓋范圍將包括:用于亞微米設(shè)備的先進光刻技術(shù);蝕刻及相關(guān)課題;離子注入;損害演化及其相關(guān)問題;等離子體和熱CVD;快速熱處理;先進的金屬化和互連方案;介質(zhì)層薄，氧化;溶膠-凝膠法加工;化學(xué)浴和(電)化學(xué)沉積;化合物半導(dǎo)體加工;新型非氧化物材料及其應(yīng)用(宏觀)分子和雜化材料;分子動力學(xué)、從頭算方法、蒙特卡羅方法等;分立電路和集成電路的新材料和新工藝;磁性材料和自旋電子學(xué);異質(zhì)結(jié)構(gòu)和量子器件;半導(dǎo)體光電特性工程;晶體生長機制;可靠性，缺陷密度，固有雜質(zhì)和缺陷。

Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.